Effect of fullerene concentration on flat-band voltage shift of capacitance-voltage curve in organic memory devices fabricated using hybrid poly(4-vinyl phenol) active layer containing fullerene

Abstract

Organic memory devices based on a hybrid poly(4-vinyl phenol) (PVP) layer containing fullerene (C-60) were formed by a spin coating method. Atomic force microscopy (AFM) images showed that the surface of the PVP layer containing C-60 was uniform. Capacitance-voltage (C-V) measurements on Al/C-60 embedded in PVP layer/p-Si(100) devices at room temperature showed a hysteresis with a large flat-band voltage shift due to the existence Of C-60 molecules, indicative of the charge storage in the C-60 molecules. The magnitude of the flat-band voltage shift for the memory devices with a hybrid active layer consisting of PVP and C-60 increased with increasing C-60 concentration.