Fabrication of nonvolatile nano floating gate memory with self-assembled metal-oxide nano particles embedded in polyimide
DC Field | Value | Language |
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dc.contributor.author | Kim, Seon Pil | - |
dc.contributor.author | Lee, Tae Hee | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Koo, Hyun-Mo | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.contributor.author | Kim, Young-Ho | - |
dc.date.accessioned | 2022-12-21T02:52:54Z | - |
dc.date.available | 2022-12-21T02:52:54Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178573 | - |
dc.description.abstract | A nonvolatile nano floating gate memory (NFGM) device with self-assembled In(2)O(3) nano particles embedded in a polyimide (PI) layer was fabricated and its electrical properties were evaluated. Self-assembled In(2)O(3) nano particles with an average diameter of 7 nm, and a density of 5.8 x 10(11) cm(-2) were fabricated by chemical reaction between indium and polyamic acid during a curing process at 400 degrees C for 1 h. Then, this NFGM device has a double control layer consisting of PI and SiO(2) insulator layers. The programming and erasing speeds of this device were 200ms and 1 s, respectively. Then, the memory window rapidly decreased from 4 V at the initial to 0.5 V at 50 s, and then it was maintained after 10(3) S. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | JAPAN SOCIETY APPLIED PHYSICS | - |
dc.title | Fabrication of nonvolatile nano floating gate memory with self-assembled metal-oxide nano particles embedded in polyimide | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.contributor.affiliatedAuthor | Kim, Young-Ho | - |
dc.identifier.doi | 10.1143/JJAP.47.4996 | - |
dc.identifier.scopusid | 2-s2.0-55049131699 | - |
dc.identifier.wosid | 000257260500032 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.6, pp.4996 - 4999 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 47 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 4996 | - |
dc.citation.endPage | 4999 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordAuthor | metal-oxide | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordAuthor | nano floating gate memory | - |
dc.subject.keywordAuthor | In(2)O(3) | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.47.4996 | - |
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