Fabrication of nonvolatile nano floating gate memory with self-assembled metal-oxide nano particles embedded in polyimide
- Authors
- Kim, Seon Pil; Lee, Tae Hee; Lee, Dong Uk; Kim, Eun Kyu; Koo, Hyun-Mo; Cho, Won-Ju; Kim, Young-Ho
- Issue Date
- Jun-2008
- Publisher
- JAPAN SOCIETY APPLIED PHYSICS
- Keywords
- metal-oxide; nonvolatile memory; nano floating gate memory; In(2)O(3)
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.6, pp.4996 - 4999
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 47
- Number
- 6
- Start Page
- 4996
- End Page
- 4999
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178573
- DOI
- 10.1143/JJAP.47.4996
- ISSN
- 0021-4922
- Abstract
- A nonvolatile nano floating gate memory (NFGM) device with self-assembled In(2)O(3) nano particles embedded in a polyimide (PI) layer was fabricated and its electrical properties were evaluated. Self-assembled In(2)O(3) nano particles with an average diameter of 7 nm, and a density of 5.8 x 10(11) cm(-2) were fabricated by chemical reaction between indium and polyamic acid during a curing process at 400 degrees C for 1 h. Then, this NFGM device has a double control layer consisting of PI and SiO(2) insulator layers. The programming and erasing speeds of this device were 200ms and 1 s, respectively. Then, the memory window rapidly decreased from 4 V at the initial to 0.5 V at 50 s, and then it was maintained after 10(3) S.
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