Fabrication of nonvolatile nano floating gate memory with self-assembled metal-oxide nano particles embedded in polyimide

Abstract

A nonvolatile nano floating gate memory (NFGM) device with self-assembled In(2)O(3) nano particles embedded in a polyimide (PI) layer was fabricated and its electrical properties were evaluated. Self-assembled In(2)O(3) nano particles with an average diameter of 7 nm, and a density of 5.8 x 10(11) cm(-2) were fabricated by chemical reaction between indium and polyamic acid during a curing process at 400 degrees C for 1 h. Then, this NFGM device has a double control layer consisting of PI and SiO(2) insulator layers. The programming and erasing speeds of this device were 200ms and 1 s, respectively. Then, the memory window rapidly decreased from 4 V at the initial to 0.5 V at 50 s, and then it was maintained after 10(3) S.