Electrical characterization of nano-floating gate capacitor with silicon carbide nano particles

Abstract

A nano-floating gate capacitor with multi layer silicon carbide (SiC) nano particles embedded in the silicon dioxide (SiO(2)) layer was fabricated and its electrical properties were evaluated. SiC nano particles were fabricated by radio frequency magnetron sputtering using a rapid thermal process system. The SiC nano particles obtained were spherical with diameters of 3-5 nm. The flat-band voltage shift of the fabricated nano-floating gate capacitor attributable to electron charge effect was about 2.8 V when the bias voltage was swept from +/- 14V. Regarding the retention characteristics, the memory window decreased with time from 2.4 V after 100 s to 0.49 V after 1000 s.