Controlled growth of vertically aligned ZnO nanowires with different crystal orientation of the ZnO seed layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cha, Seung Nam | - |
dc.contributor.author | Song, Byong Gwon | - |
dc.contributor.author | Jang, Jae Eun | - |
dc.contributor.author | Jung, Jae Eun | - |
dc.contributor.author | Han, In Taek | - |
dc.contributor.author | Ha, Jae Hwan | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.contributor.author | Kang, Dae Joon | - |
dc.contributor.author | Kim, Jong Min | - |
dc.date.accessioned | 2022-12-21T02:54:17Z | - |
dc.date.available | 2022-12-21T02:54:17Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-06 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178586 | - |
dc.description.abstract | A novel synthesis and growth method achieving vertically aligned zinc oxide (ZnO) nanowires on a silicon dioxide (SiO(2)) coated silicon (Si) substrate is demonstrated. The growth direction of the ZnO nanowires is determined by the crystal structure of the ZnO seed layer, which is formed by the oxidation of a DC-sputtered Zn film. The [002] crystal direction of the seed layer is dominant under optimized thickness of the Zn film and thermal treatment. Vertically aligned ZnO nanowires on SiO(2) coated Si substrate are realized from the appropriately thick oxidized Zn seed layer by a vapor-solid growth mechanism by catalyst-free thermal chemical vapor deposition (CVD). These experimental results raise the possibility of using the nanowires as functional blocks for high-density integration systems and/or photonic applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Controlled growth of vertically aligned ZnO nanowires with different crystal orientation of the ZnO seed layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1088/0957-4484/19/23/235601 | - |
dc.identifier.scopusid | 2-s2.0-44949092493 | - |
dc.identifier.wosid | 000255662700021 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.19, no.23, pp.1 - 4 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 19 | - |
dc.citation.number | 23 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0957-4484/19/23/235601 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.