Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Kim, Seon Pil | - |
dc.contributor.author | Lee, Tae Ree | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Koo, Hyun-Mo | - |
dc.contributor.author | Cho, Won-Ju | - |
dc.contributor.author | Kim, Young-Ho | - |
dc.date.accessioned | 2022-12-21T03:21:03Z | - |
dc.date.available | 2022-12-21T03:21:03Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-05 | - |
dc.identifier.issn | 0916-8524 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178682 | - |
dc.description.abstract | We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In2O3 nano-particles embedded in polyimide insulator. Self-assembled In2O3 nano-partictes were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In2O3 nano-particles were 7 nm and 6 x 10(11) cm(-2), respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In2O3 nano-particles. And a memory window measured about 1 V at initial status. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.title | Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.contributor.affiliatedAuthor | Kim, Young-Ho | - |
dc.identifier.doi | 10.1093/ietele/e91-c.5.747 | - |
dc.identifier.scopusid | 2-s2.0-77953581948 | - |
dc.identifier.wosid | 000256861500015 | - |
dc.identifier.bibliographicCitation | IEICE TRANSACTIONS ON ELECTRONICS, v.E91C, no.5, pp.747 - 750 | - |
dc.relation.isPartOf | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.title | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.volume | E91C | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 747 | - |
dc.citation.endPage | 750 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | In2O3 | - |
dc.subject.keywordAuthor | memory | - |
dc.subject.keywordAuthor | SOI | - |
dc.subject.keywordAuthor | nano-particles | - |
dc.subject.keywordAuthor | nonvolatile | - |
dc.identifier.url | https://www.jstage.jst.go.jp/article/transele/E91.C/5/E91.C_5_747/_article | - |
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