Electrical characterization of nano-floating gated silicon-on-insulator memory with In2O3 nano-particles embedded in polyimide insulator
- Authors
- Lee, Dong Uk; Kim, Seon Pil; Lee, Tae Ree; Kim, Eun Kyu; Koo, Hyun-Mo; Cho, Won-Ju; Kim, Young-Ho
- Issue Date
- May-2008
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- In2O3; memory; SOI; nano-particles; nonvolatile
- Citation
- IEICE TRANSACTIONS ON ELECTRONICS, v.E91C, no.5, pp.747 - 750
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEICE TRANSACTIONS ON ELECTRONICS
- Volume
- E91C
- Number
- 5
- Start Page
- 747
- End Page
- 750
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178682
- DOI
- 10.1093/ietele/e91-c.5.747
- ISSN
- 0916-8524
- Abstract
- We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In2O3 nano-particles embedded in polyimide insulator. Self-assembled In2O3 nano-partictes were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In2O3 nano-particles were 7 nm and 6 x 10(11) cm(-2), respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In2O3 nano-particles. And a memory window measured about 1 V at initial status.
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