In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon
- Authors
- Lee, Jin-Seok; Byeun, Yun-Ki; Lee, Sang-Hoon; Choi, Sung-Churl
- Issue Date
- May-2008
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- silicon carbide; nanostructure; scanning and transmission electron microscopy; calorimetry
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.456, no.1-2, pp.257 - 263
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 456
- Number
- 1-2
- Start Page
- 257
- End Page
- 263
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178701
- DOI
- 10.1016/j.jallcom.2007.02.010
- ISSN
- 0925-8388
- Abstract
- Carbothermal process parameters such as powder mixing ratio, temperature, holding time and gas flow rate, which affect on the reasonable growth rate of SiC nanowires were investigated using a mixture of low-purity SiO2 containing iron component and carbon in this study. SiC nanowires are being grown at 1400 degrees C for 2 h in an argon flow rate of 2 L/min by a vapor-liquid-solid (VLS) process, which produces a very high-purity product with about 60 nm and several hundreds of micrometers in diameter and length, respectively. This is attributed to the migration of the iron out of the low-purity SiO2 material as finely divided iron-rich droplets acting in the role of catalyst for the architecture of a SiC one-dimensional structure. The growth rate of SiC nanowires increased with increasing holding time and flow gas rate, inducing the supersaturation degree to become lower.
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