Characterization of electron irradiated GaN n(+)-p diode
- Authors
- Lee, Dong Uk; Kim, Eun Kyu; Lee, Byung Cheol; Oh, Dae Kon
- Issue Date
- Apr-2008
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- electron-beam irradiation; GaN; n(+)-p diode; photo detector; deep level transient spectroscopy
- Citation
- THIN SOLID FILMS, v.516, no.11, pp.3482 - 3485
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 516
- Number
- 11
- Start Page
- 3482
- End Page
- 3485
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178757
- DOI
- 10.1016/j.tsf.2007.08.050
- ISSN
- 0040-6090
- Abstract
- Electron-beam irradiated GaN n(+)-p diodes were characterized by deep level transient spectroscopy (DLTS) and optical responsivity measurements. The GaN n(+)-p diode structures were grown by metal organic chemical vapor deposition technique, and the electron irradiation was done by the energies of 1 MeV and 2 MeV with dose of 1 x 10(16) cm(-2). In DLTS measurement, the defect states of E-c-0.36 eV and E-c-0.44 eV in the electron irradiated diodes appeared newly. The optical responsivity of GaN n(+)-p diode was characterized in ultra-violet region, and then the maximum optical responsivity at 350 nm was decreased after electron-beam irradiation.
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