Characteristics of low-kappa SiOC films deposited via atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Lee, Jaemin | - |
dc.contributor.author | Jang, Woochool | - |
dc.contributor.author | Kim, Hyunjung | - |
dc.contributor.author | Shin, Seokyoon | - |
dc.contributor.author | Kweon, Youngkyun | - |
dc.contributor.author | Lee, Kunyoung | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2021-08-02T13:53:59Z | - |
dc.date.available | 2021-08-02T13:53:59Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17876 | - |
dc.description.abstract | The deposition of SiOC thin films via remote plasma atomic layer deposition was investigated. Octamethylcyclotetrasiloxane (OMCTS) and O-2, Ar, H-2 plasmas were respectively used as a precursor and reactants during the deposition process at 400 degrees C. Plasma and deposition temperatures had a significant effect on the physical and electrical characteristics of the films. When Ar and H-2 plasma was respectively used during the deposition process, films exhibited low dielectric constants while incorporating carbon; however, O-2 plasma yielded carbon free SiO2 films. Low dielectric constants resulted in low film densities and the presence of carbon within the films. When Ar and H-2 plasma was used as the reactant gas, pores within the films with loose structures and SieC bonds served to lower the dielectric constant. As a result, Ar and H-2 plasma conditions exhibited low dielectric constants of 2.7 and 3.1 at 100 degrees C, respectively. Meanwhile, the presence of carbon and low film densities caused leakage paths within the films. X-ray photoelectron spectroscopy supported analyses demonstrating the bonding characteristics of Si, C, O components. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Characteristics of low-kappa SiOC films deposited via atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1016/j.tsf.2017.10.045 | - |
dc.identifier.scopusid | 2-s2.0-85033361121 | - |
dc.identifier.wosid | 000418305200049 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.645, pp.334 - 339 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 645 | - |
dc.citation.startPage | 334 | - |
dc.citation.endPage | 339 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | LOW-DIELECTRIC-CONSTANT | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | PECVD | - |
dc.subject.keywordPlus | TETRAMETHYLSILANE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordAuthor | Octamethylcyclotetrasiloxane | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Low-dielectric constant | - |
dc.subject.keywordAuthor | Silicon oxycarbide | - |
dc.subject.keywordAuthor | Thin film | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609017308076?via%3Dihub | - |
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