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Strain effects and potential profiles of multiple vertically stacked InAs/GaAs self-assembled quantum dot arrays with different sizes
- Issue Date
- Apr-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- strain effect; potential profile; InAs/GaAs quantum dot array; finite-difference method
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1192 - 1196
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 52
- Number
- 4
- Start Page
- 1192
- End Page
- 1196
- ISSN
- 0374-4884
- Abstract
- The shape of InAs/GaAs quantum dots (QDs) was modeled to be a half ellipsoid on the basis of a cross-sectional bright-field transmission electron microscopy image. The strains of the vertically stacked QDs with different sizes were numerically calculated by using a three-dimensional finite-difference method (FDM). The deformational part of the potential energy was calculated by using the FDM taking into account normal strain components. These results can help improve understanding of the strains and the potential profiles of vertically stacked InAs/GaAs QDs arrays.
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