Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ok, Kyung-Chul | - |
dc.contributor.author | Lim, Jun-Hyung | - |
dc.contributor.author | Jeong, Hyun-Jun | - |
dc.contributor.author | Lee, Hyun-Mo | - |
dc.contributor.author | Rim, You Seung | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2021-08-02T13:54:18Z | - |
dc.date.available | 2021-08-02T13:54:18Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-01 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17893 | - |
dc.description.abstract | Photochemical reactions in inorganic films, which can, be promoted by the addition, of thermal energy, enable significant changes in the properties of films. Metaphase films depend significantly on introducing external energy even at low temperatures.: We performed thermal-induced, deep ultraviolet, based, thermal-photochemical activation of metaphase ZnOxNy films at low temperature, and we observed peculiar-variations, in the nanostructures with phase transformation and densification. The separated; Zn3N2 and ZnO nanocrystalline lattice in amorphous ZnOxNy was-stabilized remarkably by the-reduction Of oxygen defects and IT;the interfacial atomic rearrangement without breaking the N-bonding. On the basis of these approaches, we successfully demonstrated highly flexible, nanocrystalline-ZnOxNy thin-film transistors on polyethylene naphthalate films, and the saturation mobility showed more than 60 cm(2) V-1 s(-1). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1021/acsami.7b16046 | - |
dc.identifier.scopusid | 2-s2.0-85041176335 | - |
dc.identifier.wosid | 000423496500059 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.3, pp.2709 - 2715 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 10 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 2709 | - |
dc.citation.endPage | 2715 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | X-RAY-ABSORPTION | - |
dc.subject.keywordPlus | GA-ZN-O | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | METAL-OXIDES | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | zinc-oxynitride | - |
dc.subject.keywordAuthor | photochemical reaction | - |
dc.subject.keywordAuthor | low-temperature process | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.7b16046 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.