Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization
- Authors
- Hatayama, Shogo; Sutou, Yuji; Shindo, Satoshi; Saito, Yuta; Song, Yun Heub; Ando, Daisuke; Koike, Junichi
- Issue Date
- Jan-2018
- Publisher
- American Chemical Society
- Keywords
- phase-change random access memory; Cr-Ge-Te; amorphous; crystallization; contact resistivity
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.10, no.3, pp.2725 - 2734
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 10
- Number
- 3
- Start Page
- 2725
- End Page
- 2734
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17894
- DOI
- 10.1021/acsami.7b16755
- ISSN
- 1944-8244
- Abstract
- Phase-change random access memory (PCRAM) has attracted much attention for next-generation nonvolatile memory that can replace flash memory and can be used for storage-class memory. Generally, PCRAM relies on the change in the electrical resistance of a phase-change material between high-resistance amorphous (reset) and low-resistance crystalline (set) states. Herein, we present an inverse resistance change PCRAM with Cr2Ge2Te6 (CrGT) that shows a high-resistance crystalline reset state and a low-resistance amorphous set state. The inverse resistance change was found to be due to a drastic decrease in the carrier density upon crystallization, which causes a large increase in contact resistivity between CrGT and the electrode. The CrGT memory cell was demonstrated to show fast reversible resistance switching with a much lower operating energy for amorphization than a Ge2Sb2Te5 memory cell. This low operating energy in CrGT should be due to a small programmed amorphous volume, which can be realized by a high-resistance crystalline matrix and a dominant contact resistance. Simultaneously) CrGT can break the trade-off relationship between the crystallization temperature and operating speed.
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