Effects of a H2SO4-treatment on the optical properties in porous Si layers and electrical properties of diode devices fabricated with a H2SO4 treated porous Si layer

Abstract

The effects of a H2SO4 treatment on the optical properties in porous silicon (PS) layers were investigated by using photoluminescence (PL) measurements, and electrical properties of diode devices fabricated with a PS were investigated by current density-applied voltage (J-V) measurements. Scanning electron microscopy images showed that the PS layers were formed by electrochemical anodization. While the PL intensity of the PS layer immersed into H2SO4 solution was significantly increased in comparison with that of the as-formed PS layer, the PL peak position did not change regardless of variations in the H2SO4 treatment time due to the invariance of the crystal structure of the PS layer. The J-V curve for the indium-tin-oxide/ H2SO40 treated PS layer/n-Si/Al structure showed diode characteristics with a small turn-on voltage.