Resistance switching characteristics in Li-doped NiO
DC Field | Value | Language |
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dc.contributor.author | Jung, Kyooho | - |
dc.contributor.author | Choi, Joonhyuk | - |
dc.contributor.author | Kim, Yongmin | - |
dc.contributor.author | Im, Hyunsik | - |
dc.contributor.author | Seo, Sunae | - |
dc.contributor.author | Jung, Ranju | - |
dc.contributor.author | Kim, DongChul | - |
dc.contributor.author | Kim, Jin Soo | - |
dc.contributor.author | Park, Bae Ho | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-12-21T04:21:57Z | - |
dc.date.available | 2022-12-21T04:21:57Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-02 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179015 | - |
dc.description.abstract | We investigated the effects of lithium (Li)-doping on bi-stable resistance switching in polycrystalline NiO film in the temperature range of 10 K < T < 300 K. Compliance-dependent resistive switching transport revealed some distinctive and interesting features not observed in undoped NiO films previously studied. An analysis of the temperature dependence of the resistive switching transport showed that Li-doping could modify the thermal properties of the off-state leading to a stable on/off switching operation. It is clearly shown that doping Li in NiO can improve NiO's retention properties and stability of on/off switching voltages. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Resistance switching characteristics in Li-doped NiO | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1063/1.2837102 | - |
dc.identifier.scopusid | 2-s2.0-39349110003 | - |
dc.identifier.wosid | 000253238100080 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.103, no.3, pp.1 - 4 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 103 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2837102 | - |
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