Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes
DC Field | Value | Language |
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dc.contributor.author | Jun, Myungsim | - |
dc.contributor.author | Jang, Moongyu | - |
dc.contributor.author | Kim, Yarkeon | - |
dc.contributor.author | Choi, Cheljong | - |
dc.contributor.author | Kim, Taeyoub | - |
dc.contributor.author | Oh, Soonyoung | - |
dc.contributor.author | Lee, Seongjae | - |
dc.date.accessioned | 2022-12-21T04:49:53Z | - |
dc.date.available | 2022-12-21T04:49:53Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-01 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179085 | - |
dc.description.abstract | We manufactured erbium-silicided Schottky diodes on n-type and p-type silicon substrates to determine the Schottky barrier heights for electrons and holes, respectively. The effective barrier heights were extracted from the current-voltage-temperature characteristics of the Schottky diodes in reverse-bias condition. The barrier heights were obtained as a function of temperature, decreasing with the decrease of temperature. Low effective barrier heights at low temperature may be due to the trap-assisted current at the erbium silicide/silicon Schottky junction. The temperature-independent barrier heights for electrons and holes were evaluated to be 0.39 and 0.69 eV, respectively, at high temperature by fitting the effective barrier heights as a function of temperature. In this case, the carrier conduction mechanism can be explained by the pure thermionic emission model. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Seongjae | - |
dc.identifier.doi | 10.1116/1.2825172 | - |
dc.identifier.scopusid | 2-s2.0-38849135668 | - |
dc.identifier.wosid | 000253399000032 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.26, no.1, pp.137 - 140 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 26 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 137 | - |
dc.citation.endPage | 140 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON INTERFACES | - |
dc.subject.keywordPlus | INHOMOGENEITIES | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordPlus | JUNCTION | - |
dc.identifier.url | https://avs.scitation.org/doi/full/10.1116/1.2825172 | - |
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