Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes
- Authors
- Jun, Myungsim; Jang, Moongyu; Kim, Yarkeon; Choi, Cheljong; Kim, Taeyoub; Oh, Soonyoung; Lee, Seongjae
- Issue Date
- Jan-2008
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.26, no.1, pp.137 - 140
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 26
- Number
- 1
- Start Page
- 137
- End Page
- 140
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179085
- DOI
- 10.1116/1.2825172
- ISSN
- 1071-1023
- Abstract
- We manufactured erbium-silicided Schottky diodes on n-type and p-type silicon substrates to determine the Schottky barrier heights for electrons and holes, respectively. The effective barrier heights were extracted from the current-voltage-temperature characteristics of the Schottky diodes in reverse-bias condition. The barrier heights were obtained as a function of temperature, decreasing with the decrease of temperature. Low effective barrier heights at low temperature may be due to the trap-assisted current at the erbium silicide/silicon Schottky junction. The temperature-independent barrier heights for electrons and holes were evaluated to be 0.39 and 0.69 eV, respectively, at high temperature by fitting the effective barrier heights as a function of temperature. In this case, the carrier conduction mechanism can be explained by the pure thermionic emission model.
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