Effect of buffer layer for HfO2 gate dielectrics grown by remote plasma atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Kim, Seokhoon | - |
dc.contributor.author | Woo, Sanghyun | - |
dc.contributor.author | Hong, Hyungseok | - |
dc.contributor.author | Kim, Hyungchul | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.contributor.author | Bae, Choelhwyi | - |
dc.date.accessioned | 2022-12-21T05:10:20Z | - |
dc.date.available | 2022-12-21T05:10:20Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-12 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179229 | - |
dc.description.abstract | Three different buffer layers on a Si substrate were grown to investigate the interfacial layer effect during HfO2 deposition and thermal annealing. The three different buffer layers were the very thin Al2O3, remote plasma nitridation (RPN)-treated Al2O3, and RPN-treated HfO2 films. HfO2 films were then grown on these three different buffer layers by a remote plasma atomic layer deposition method. The HfO2 films with RPN-treated buffer layers retarded silicate formation or growth of an interfacial layer more effectively than those without RPN treatment. The HfO2 films with an RPN-treated HfO2 buffer layer showed the lowest effective oxide thickness and those with an RPN-treated buffer layer exhibited low leakage current density. The effective fixed-oxide charge density of the HfO2 film with an RPN-treated HfO2 buffer layer showed the lowest value of 3.60 x 10(11)/cm(2) compared to the other films. As the annealing temperature increased, the flatband voltage (V-FB) for the HfO2 films was shifted and became close to the ideal VFB. The interface stability of HfO2 with a nitrided buffer layer formed by RPN treatments resulted in the improvement of the electrical properties of HfO2 films. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Effect of buffer layer for HfO2 gate dielectrics grown by remote plasma atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1149/1.2401033 | - |
dc.identifier.scopusid | 2-s2.0-33846265390 | - |
dc.identifier.wosid | 000243380200074 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.2, pp.H97 - H101 | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 154 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | H97 | - |
dc.citation.endPage | H101 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SILICON DIOXIDE | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.2401033 | - |
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