Effect of buffer layer for HfO2 gate dielectrics grown by remote plasma atomic layer deposition
- Authors
- Kim, Seokhoon; Woo, Sanghyun; Hong, Hyungseok; Kim, Hyungchul; Jeon, Hyeongtag; Bae, Choelhwyi
- Issue Date
- Dec-2007
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.2, pp.H97 - H101
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 154
- Number
- 2
- Start Page
- H97
- End Page
- H101
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179229
- DOI
- 10.1149/1.2401033
- ISSN
- 0013-4651
- Abstract
- Three different buffer layers on a Si substrate were grown to investigate the interfacial layer effect during HfO2 deposition and thermal annealing. The three different buffer layers were the very thin Al2O3, remote plasma nitridation (RPN)-treated Al2O3, and RPN-treated HfO2 films. HfO2 films were then grown on these three different buffer layers by a remote plasma atomic layer deposition method. The HfO2 films with RPN-treated buffer layers retarded silicate formation or growth of an interfacial layer more effectively than those without RPN treatment. The HfO2 films with an RPN-treated HfO2 buffer layer showed the lowest effective oxide thickness and those with an RPN-treated buffer layer exhibited low leakage current density. The effective fixed-oxide charge density of the HfO2 film with an RPN-treated HfO2 buffer layer showed the lowest value of 3.60 x 10(11)/cm(2) compared to the other films. As the annealing temperature increased, the flatband voltage (V-FB) for the HfO2 films was shifted and became close to the ideal VFB. The interface stability of HfO2 with a nitrided buffer layer formed by RPN treatments resulted in the improvement of the electrical properties of HfO2 films.
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