Improved light extraction efficiency of InGaN-Based light-emitting diodes with patterned n-GaN substrate
- Authors
- Kwon, Kwang-Woo; Park, Si-Hyun; Cho, Seong-Su; Kim, Bong-Jin; Kim, Ig-Hyeon; Lee, June Key; Ryu, Sang Wan; Kim, Young Ho
- Issue Date
- Dec-2007
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Keywords
- light extraction efficiency; InGaN; light-emitting diodes; patterned n-GaN substrate
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.12, pp.7622 - 7625
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
- Volume
- 46
- Number
- 12
- Start Page
- 7622
- End Page
- 7625
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179269
- DOI
- 10.1143/JJAP.46.7622
- ISSN
- 0021-4922
- Abstract
- We improved the light extraction efficiency of InGaN-based light-emitting diodes (LEDs) in which an n-type GaN layer was patterned onto a sapphire substrate with nano-sized SiO2 columns. Indium tin oxide thin layer deposition on a SiO2 layer followed by wet etching gives rise to oxide self-assembled clusters of 100-400 nm size and a subsequent SiO2 etching with an oxide mask results in SiO2 columns on an n-type GaN layer. The output power of the patterned n-GaN substrate (PNS) LED shows a 1.33 time increase compared with that of a normal LED without an n-GaN pattern when the total output power emitted in all directions from the packaging LED was measured under a current injection of 20 mA. The increase in output power from the PNS LED depends on the size of the SiO2 columns on the n-type GaN substrate.
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