Effect of C60 concentrations on the flat-band voltage shift of nonvolatile memory devices with a hybrid poly-4-vinyl-phenol and C60 active layer

Abstract

Organic memory devices with a hybrid active layer consisting of the PVP and C60 were formed by using the spin-coating technique. The C-V curves for AI/hybrid PVP and C60 composites on p-type Si (100)/A1 structure at room temperature showed a MIS behavior with a large flat-band voltage shin due to the existence of the C60 molecules. The magnitude of the flat-band voltage for the memory devices with a hybrid active layer consisting of the PVP and C60 increased with increasing C60 concentration. These results indicate that organic memory device based on the PVP and C60 hybrid active layer hold promise for potential applications in next-generation nonvolatile flash memory devices.