Effect of C60 concentrations on the flat-band voltage shift of nonvolatile memory devices with a hybrid poly-4-vinyl-phenol and C60 active layer
- Authors
- Kim, Hyuk Joo; Jung, Jae Hun; Kim, Tae Whan; Jung, Jae Hun
- Issue Date
- Nov-2007
- Publisher
- MNC 2007
- Citation
- Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, pp.224 - 225
- Indexed
- SCOPUS
- Journal Title
- Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
- Start Page
- 224
- End Page
- 225
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179342
- DOI
- 10.1109/IMNC.2007.4456185
- ISSN
- 0000-0000
- Abstract
- Organic memory devices with a hybrid active layer consisting of the PVP and C60 were formed by using the spin-coating technique. The C-V curves for AI/hybrid PVP and C60 composites on p-type Si (100)/A1 structure at room temperature showed a MIS behavior with a large flat-band voltage shin due to the existence of the C60 molecules. The magnitude of the flat-band voltage for the memory devices with a hybrid active layer consisting of the PVP and C60 increased with increasing C60 concentration. These results indicate that organic memory device based on the PVP and C60 hybrid active layer hold promise for potential applications in next-generation nonvolatile flash memory devices.
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