Formation and optical properties of CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates
DC Field | Value | Language |
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dc.contributor.author | Lee, Hong Seok | - |
dc.contributor.author | Park, Hong Lee | - |
dc.contributor.author | Lee, In hwan | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-21T05:36:19Z | - |
dc.date.available | 2022-12-21T05:36:19Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-11 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179408 | - |
dc.description.abstract | Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the formation and the optical properties of CdTe/ZnTe nanostructures with various CdTe thicknesses grown on Si (100) substrates by using molecular beam epitaxy and atomic layer epitaxy. AFM images showed that uniform CdTe/ZnTe quantum dots with a CdTe layer thickness of 2.5 ML (monolayer) were formed on Si (100) substrates. The excitonic peaks corresponding to transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/ZnTe nanostructures shifted to a lower energy with increasing thickness of the CdTe layer. The activation energies of the carriers confined in the CdTe/ZnTe nanostructures grown on Si (100) substrates were obtained from the temperature-dependent PL spectra. The present observations can help improve understanding of the formation and the optical properties in CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Formation and optical properties of CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, In hwan | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1063/1.2812557 | - |
dc.identifier.scopusid | 2-s2.0-36649016243 | - |
dc.identifier.wosid | 000251324900018 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.102, no.10, pp.1 - 6 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 102 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SINGLE-ELECTRON TRANSISTOR | - |
dc.subject.keywordPlus | ASSEMBLED QUANTUM DOTS | - |
dc.subject.keywordPlus | ACTIVATION-ENERGY | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | WELLS | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordPlus | BIEXCITONS | - |
dc.subject.keywordPlus | SEPARATION | - |
dc.subject.keywordPlus | BARRIER | - |
dc.subject.keywordPlus | HEIGHT | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2812557 | - |
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