Formation and optical properties of CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates
- Authors
- Lee, Hong Seok; Park, Hong Lee; Lee, In hwan; Kim, Tae Whan
- Issue Date
- Nov-2007
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.102, no.10, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 102
- Number
- 10
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179408
- DOI
- 10.1063/1.2812557
- ISSN
- 0021-8979
- Abstract
- Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the formation and the optical properties of CdTe/ZnTe nanostructures with various CdTe thicknesses grown on Si (100) substrates by using molecular beam epitaxy and atomic layer epitaxy. AFM images showed that uniform CdTe/ZnTe quantum dots with a CdTe layer thickness of 2.5 ML (monolayer) were formed on Si (100) substrates. The excitonic peaks corresponding to transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/ZnTe nanostructures shifted to a lower energy with increasing thickness of the CdTe layer. The activation energies of the carriers confined in the CdTe/ZnTe nanostructures grown on Si (100) substrates were obtained from the temperature-dependent PL spectra. The present observations can help improve understanding of the formation and the optical properties in CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates.
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