Oxidant effect on resistance switching characteristics of HfO2 film grown atomic layer deposition

Abstract

The resistance switching phenomena of Mo/HfO2/Mo resistors were investigated with HfO2 films formed by using different oxidants. HfO2 films were atomic layer deposited using H2O, D 2O, and O3 as oxidants, respectively. Repeatable and reliable resistance switching behaviors were obtained with H2O- and D2O-processed HfO2 films whereas O3-processed film showed only insulating breakdown. The depth profiles such as carbon in H2O- and O3-processed HfO2 films were probed using auger electron spectroscopy. The carbon content detected near the top interface of H2O-processed HfO2 film is helpful to appear the resistance switching behavior.