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Plasma etching for the application to low-k dielectrics devices

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dc.contributor.authorLee, J.W.-
dc.contributor.authorKim, H.W.-
dc.contributor.authorHan, J.W.-
dc.contributor.authorKim, M.-S.-
dc.contributor.authorYoo, B.-D.-
dc.contributor.authorKim, M.-H.-
dc.contributor.authorLee, C.-H.-
dc.contributor.authorLee, C.H.-
dc.contributor.authorLim, C.H.-
dc.contributor.authorHwang, S.-K.-
dc.contributor.authorLee, C.-
dc.contributor.authorChung, D.J.-
dc.contributor.authorPark, S.-G.-
dc.contributor.authorLee, S.G.-
dc.contributor.authorO, B.H.-
dc.contributor.authorKim, J.-
dc.contributor.authorChang, S.P.-
dc.contributor.authorLee, S.H.-
dc.contributor.authorChai, S.-Y.-
dc.contributor.authorLee, W.I.-
dc.contributor.authorPark, S.-E.-
dc.contributor.authorKim, K.-
dc.contributor.authorChoi, D.-K.-
dc.contributor.authorChung, Chin Wook-
dc.date.accessioned2022-12-21T06:23:36Z-
dc.date.available2022-12-21T06:23:36Z-
dc.date.issued2007-09-
dc.identifier.issn0255-5476-
dc.identifier.issn1662-9752-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179572-
dc.description.abstractWe present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.-
dc.format.extent6-
dc.language영어-
dc.language.isoENG-
dc.publisherTrans Tech Publications Ltd.-
dc.titlePlasma etching for the application to low-k dielectrics devices-
dc.typeArticle-
dc.publisher.location스위스-
dc.identifier.doi10.4028/www.scientific.net/MSF.555.113-
dc.identifier.scopusid2-s2.0-39049167212-
dc.identifier.bibliographicCitationMaterials Science Forum, v.555, pp 113 - 118-
dc.citation.titleMaterials Science Forum-
dc.citation.volume555-
dc.citation.startPage113-
dc.citation.endPage118-
dc.type.docTypeConference Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusFourier transform infrared spectroscopy-
dc.subject.keywordPlusInductively coupled plasma-
dc.subject.keywordPlusPhotoresistors-
dc.subject.keywordPlusPlasma etching-
dc.subject.keywordPlusBias power-
dc.subject.keywordPlusEtching damage-
dc.subject.keywordPlusGas flow ratio-
dc.subject.keywordPlusLow-k dielectric-
dc.subject.keywordPlusDielectric devices-
dc.subject.keywordAuthorICP-
dc.subject.keywordAuthorLow-k material-
dc.subject.keywordAuthorPhotoresist-
dc.identifier.urlhttps://www.scientific.net/MSF.555.113-
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