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Electronic structure and defect states of transition metal doped rutile TiO2

Authors
Kim, Yoon SukLee, Sung- HoLee, Kyung SubChung, Yong Chae
Issue Date
Sep-2007
Publisher
Trans Tech Publications Ltd
Keywords
Defect states; Density functional theory; Electronic structure
Citation
Solid State Phenomena, v.124-126, no.PART 1, pp.787 - 790
Indexed
SCOPUS
Journal Title
Solid State Phenomena
Volume
124-126
Number
PART 1
Start Page
787
End Page
790
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179601
DOI
10.4028/www.scientific.net/SSP.124-126.787
ISSN
1012-0394
Abstract
The electronic structure and defect states of 6.25% transition metal (TM = Fe and Co) doped rutile titanium dioxide were investigated by ab initio ultrasoft pseudopotential plane wave method based on density functional theory. When a Fe or Co atom was substituted for a Ti site of TiO2 lattice, additional unoccupied 3d-states of TM appeared as defect states in band-gap and occupied 3d-states represented metallic behavior (half-filled states).It was found that two occupied defect states and one half-filled defect state were the 3d-states of TM from the calculation of band decomposed charge density. The higher unoccupied states were hybridized with unoccupied oxygen 2p-states and located at the middle of band-gap.
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