Deep level defects in AlxGa1-xN/GaN heterointerfaces grown by molecular beam epitaxy
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Hee Chang | - |
dc.contributor.author | Park, Chan Jin | - |
dc.contributor.author | Cho, Hoon Young | - |
dc.contributor.author | Kang, Tae Won | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Oh, Jae Eung | - |
dc.date.accessioned | 2022-12-21T06:27:39Z | - |
dc.date.available | 2022-12-21T06:27:39Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2007-09 | - |
dc.identifier.issn | 1012-0394 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179604 | - |
dc.description.abstract | Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to investigate the existence of the carriers and the behavior of the deep levels in the AlxGa1-xN/GaN heterointerface. The C-V depth profile showed that the carrier concentration existed at the Al xGa1-xN/GaN heterointerface was 4 × 1012 cm2. The DLTS results showed two deep levels. The capture cross-section of the deep level related to the two-dimensional electron gas decreased with increasing depth, resulting from the existence of the different deep levels in each region. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Trans Tech Publications Ltd | - |
dc.title | Deep level defects in AlxGa1-xN/GaN heterointerfaces grown by molecular beam epitaxy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.4028/www.scientific.net/SSP.124-126.89 | - |
dc.identifier.scopusid | 2-s2.0-38549157723 | - |
dc.identifier.bibliographicCitation | Solid State Phenomena, v.124-126, no.PART 1, pp.89 - 92 | - |
dc.relation.isPartOf | Solid State Phenomena | - |
dc.citation.title | Solid State Phenomena | - |
dc.citation.volume | 124-126 | - |
dc.citation.number | PART 1 | - |
dc.citation.startPage | 89 | - |
dc.citation.endPage | 92 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Capacitance | - |
dc.subject.keywordPlus | Growth (materials) | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.subject.keywordPlus | Molecular beam epitaxy | - |
dc.subject.keywordPlus | Spectroscopic analysis | - |
dc.subject.keywordPlus | Deep levels | - |
dc.subject.keywordPlus | Two-dimensional electron gas region | - |
dc.subject.keywordPlus | Gallium nitride | - |
dc.subject.keywordAuthor | Deep levels | - |
dc.subject.keywordAuthor | Two-dimensional electron gas region | - |
dc.identifier.url | https://www.scientific.net/SSP.124-126.89 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.