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Deep level defects in AlxGa1-xN/GaN heterointerfaces grown by molecular beam epitaxy
- Issue Date
- Sep-2007
- Publisher
- Trans Tech Publications Ltd
- Keywords
- Deep levels; Two-dimensional electron gas region
- Citation
- Solid State Phenomena, v.124-126, no.PART 1, pp.89 - 92
- Indexed
- SCOPUS
- Journal Title
- Solid State Phenomena
- Volume
- 124-126
- Number
- PART 1
- Start Page
- 89
- End Page
- 92
- ISSN
- 1012-0394
- Abstract
- Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to investigate the existence of the carriers and the behavior of the deep levels in the AlxGa1-xN/GaN heterointerface. The C-V depth profile showed that the carrier concentration existed at the Al xGa1-xN/GaN heterointerface was 4 × 1012 cm2. The DLTS results showed two deep levels. The capture cross-section of the deep level related to the two-dimensional electron gas decreased with increasing depth, resulting from the existence of the different deep levels in each region.
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