Impact of the top silicon thickness on phonon-limited electron mobility in (110)-oriented ultrathin-body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Moon, Hui Chang | - |
dc.contributor.author | Kim, Seong Je | - |
dc.contributor.author | Shim, Tae Hun | - |
dc.contributor.author | Park, Jea Gun | - |
dc.date.accessioned | 2022-12-21T06:38:35Z | - |
dc.date.available | 2022-12-21T06:38:35Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-09 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179666 | - |
dc.description.abstract | We investigated through a theoretical simulation how the phonon-limited electron mobility in both (110)- and (100)-oriented ultrathin-body (UTB) silicon-on-insulator (SOI) n-metal-oxide-semiconductor field-effect transistors (MOSFETs) depends on the top silicon thickness within a range from 20 to 2 nm. No electron mobility enhancement was observed in (110) UTB SOI n-MOSFETs when the top silicon thickness was around 5 nm, unlike in (100) UTB n-MOSFETs. Thus, electron mobility in (110) UTB SOI n-MOSFETs decreased with top silicon thickness, particularly in the range below 10 nm. We attributed the electron mobility degradation in (110) UTB SOI n-MOSFETs within the top silicon thickness range below 10 nm to a decrease in the effective width of the inversion layer and an increase in intravalley acoustic phonon scattering, rather than to less carrier repopulation due to less band splitting between two- and fourfold valleys. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Impact of the top silicon thickness on phonon-limited electron mobility in (110)-oriented ultrathin-body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea Gun | - |
dc.identifier.doi | 10.1063/1.2784079 | - |
dc.identifier.scopusid | 2-s2.0-34848846856 | - |
dc.identifier.wosid | 000249787200041 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.102, no.6, pp.1 - 6 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 102 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INVERSION LAYER MOBILITY | - |
dc.subject.keywordPlus | SI MOSFETS | - |
dc.subject.keywordPlus | UNIVERSALITY | - |
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