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Effect of alkaline agent in colloidal silica slurry for polycrystalline silicon chemical mechanical polishing

Authors
Lee, Myung YoonKang, Hyun GooKanemoto, ManabuPaik, UngyuPark, Jea Gun
Issue Date
Aug-2007
Publisher
IOP Publishing Ltd
Keywords
CMP; slurry; colloidal silica; polysilicon; oxide; alkaline agent; removal rate; selectivity; roughness; contact angle; surface tension
Citation
Japanese Journal of Applied Physics, v.46, no.8A, pp 5089 - 5094
Pages
6
Indexed
SCIE
SCOPUS
Journal Title
Japanese Journal of Applied Physics
Volume
46
Number
8A
Start Page
5089
End Page
5094
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179777
DOI
10.1143/JJAP.46.5089
ISSN
0021-4922
1347-4065
Abstract
Through chemical mechanical polishing (CMP) tests using polycrystalline silicon (polysilicon) and oxide blanket film wafers, the effects of alkaline agents added to colloidal silica slurries were investigated. With increasing concentration of the alkaline agent, a decreasing trend after an initial increase in the polysificon removal rate was found, along with a low oxide removal rate, enabling high selectivity. The surface roughness similarly became worse and then better with increasing concentration of the alkaline agent. The results suggest a mechanism in which hydroxide bonds to the Si surface of the abrasives in the slurry and OH- attaches to the polysilicon surface. The silanol group induces high polarization and thus weakens the Si-Si back bonds. These results can be qualitatively explained in terms of the chemical reaction between the polysilicon surface and the alkaline agent in the slurry, according to the hydrophobicity and hydrophylicity as indicated by contact angle measurements.
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서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
서울 공과대학 > 서울 에너지공학과 > 1. Journal Articles

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