Barrier characteristics of ZrN films deposited by remote plasma-enhanced atomic layer deposition using tetrakis(diethylamino)zirconium precursor

Abstract

The barrier characteristics of ZrN films deposited by remote plasma-enhanced atomic layer deposition (PEALD) using Zr[NEt2](4) [tetrakis(diethylamino)zirconium, TDEAZ] and N-2 remote plasma have been investigated using various deposition parameters. such as temperature, plasma power, and processing pressure. The optimized processing temperature, plasma power, and pressure were 300 degrees C, 200W, and I Torr, respectively. ZrN films deposited by remote PEALD using TDEAZ and N-2 remote plasma showed a carbon content of about 6 at. %. The resistivity of ZrN films was about 400 mu 2 center dot cm. The barrier characteristics of Cu/ZrN/Si samples have been investigated by X-ray diffraction (XRD) analysis, Auger electron spectroscopy (AES), and etch-pit test after annealing in vacuum for 1 h in the temperature range of 500-700 degrees C with an interval of 50 degrees C. The structure of ZrN films remained amorphous up to 550 degrees C and crystallized after annealing above 600 degrees C. The barrier characteristics of ZrN films remained up to 550 degrees C. ZrN films deposited by remote PEALD are believed to be applicable as barriers for Cu metallization in a semiconductor process.