Study of switching characteristics in SI-thyristor for pulsed power application
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Bong Seong | - |
dc.contributor.author | Ko, Kwang Cheol | - |
dc.contributor.author | Hotta, Eiki | - |
dc.date.accessioned | 2022-12-21T07:32:50Z | - |
dc.date.available | 2022-12-21T07:32:50Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2007-06 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179993 | - |
dc.description.abstract | Recent development of Stactic induction devices, SIThyristor is focused due to its high repetitive off voltage, di/dt. But, its switching characteristics is rather complicated than other power semiconductor devices. Thus, in this paper, to evaluate switching characteristics of SI-Thyritor for fast turn-on and off phase, it is proposed simple PSPICE model of SI-Thyristor and switching experiment is shown. Based on the switching experiment, it is also proposed more developed gate driver for pulsed application with comparative experiment . | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | Study of switching characteristics in SI-thyristor for pulsed power application | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ko, Kwang Cheol | - |
dc.identifier.doi | 10.1109/PPPS.2007.4652404 | - |
dc.identifier.scopusid | 2-s2.0-70350680904 | - |
dc.identifier.bibliographicCitation | PPPS-2007 - Pulsed Power Plasma Science 2007, v.2, pp.1209 - 1214 | - |
dc.relation.isPartOf | PPPS-2007 - Pulsed Power Plasma Science 2007 | - |
dc.citation.title | PPPS-2007 - Pulsed Power Plasma Science 2007 | - |
dc.citation.volume | 2 | - |
dc.citation.startPage | 1209 | - |
dc.citation.endPage | 1214 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Comparative experiments | - |
dc.subject.keywordPlus | Gate drivers | - |
dc.subject.keywordPlus | Power semiconductor devices | - |
dc.subject.keywordPlus | PSpice models | - |
dc.subject.keywordPlus | Pulsed power applications | - |
dc.subject.keywordPlus | Switching characteristics | - |
dc.subject.keywordPlus | Electric switchgear | - |
dc.subject.keywordPlus | Experiments | - |
dc.subject.keywordPlus | Plasmas | - |
dc.subject.keywordPlus | Power electronics | - |
dc.subject.keywordPlus | Semiconductor device manufacture | - |
dc.subject.keywordPlus | SPICE | - |
dc.subject.keywordPlus | Thyristors | - |
dc.subject.keywordPlus | Switching | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/4652404/ | - |
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