Study of switching characteristics in SI-thyristor for pulsed power application
- Authors
- Kim, Bong Seong; Ko, Kwang Cheol; Hotta, Eiki
- Issue Date
- Jun-2007
- Publisher
- IEEE
- Citation
- PPPS-2007 - Pulsed Power Plasma Science 2007, v.2, pp.1209 - 1214
- Indexed
- SCOPUS
- Journal Title
- PPPS-2007 - Pulsed Power Plasma Science 2007
- Volume
- 2
- Start Page
- 1209
- End Page
- 1214
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179993
- DOI
- 10.1109/PPPS.2007.4652404
- ISSN
- 0000-0000
- Abstract
- Recent development of Stactic induction devices, SIThyristor is focused due to its high repetitive off voltage, di/dt. But, its switching characteristics is rather complicated than other power semiconductor devices. Thus, in this paper, to evaluate switching characteristics of SI-Thyritor for fast turn-on and off phase, it is proposed simple PSPICE model of SI-Thyristor and switching experiment is shown. Based on the switching experiment, it is also proposed more developed gate driver for pulsed application with comparative experiment .
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