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Study of switching characteristics in SI-thyristor for pulsed power application

Authors
Kim, Bong SeongKo, Kwang CheolHotta, Eiki
Issue Date
Jun-2007
Publisher
IEEE
Citation
PPPS-2007 - Pulsed Power Plasma Science 2007, v.2, pp.1209 - 1214
Indexed
SCOPUS
Journal Title
PPPS-2007 - Pulsed Power Plasma Science 2007
Volume
2
Start Page
1209
End Page
1214
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179993
DOI
10.1109/PPPS.2007.4652404
ISSN
0000-0000
Abstract
Recent development of Stactic induction devices, SIThyristor is focused due to its high repetitive off voltage, di/dt. But, its switching characteristics is rather complicated than other power semiconductor devices. Thus, in this paper, to evaluate switching characteristics of SI-Thyritor for fast turn-on and off phase, it is proposed simple PSPICE model of SI-Thyristor and switching experiment is shown. Based on the switching experiment, it is also proposed more developed gate driver for pulsed application with comparative experiment .
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