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Effect of thermal annealing on the magnetic and the optical properties of (Ga1-xMnx)N thin films grown on GaN buffer layers

Authors
Jeon, Hee ChangShon, Yoon KyungKim, H. S.Li, AKLee, Seung JooKang, Tae WonJung, Jim HoKim, Tae WhanKim, HSKim, Moon DeocWang, KLLee, JJ
Issue Date
Jun-2007
Publisher
KOREAN PHYSICAL SOC
Keywords
(Ga0.991Mn0.009)N thin films; magnetic properties; optical properties; thermal annealing effect
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1921 - 1924
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
50
Number
6
Start Page
1921
End Page
1924
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180036
DOI
10.3938/jkps.50.1921
ISSN
0374-4884
Abstract
The annealing effect on the magnetic and the optical properties of (Ga0.991Mn0.009)N thin films grown on GaN buffer layers was investigated. The magnetization curves as functions of the magnetic field at 300 K showed that the magnetization in the (Ga0.991Mn0.009)N thin film annealed at 650 degrees C was significantly enhanced by annealing in comparison with that of the as-grown film. The photoluminescence spectra at 4 K showed that the optical properties of the (Ga0.991Mn0.009)N thin film annealed at 650 degrees C were improved due to annealing. These results can help to improve understanding of the thermal annealing effect on the magnetic and the optical properties of (Ga1-xMnx)N thin films grown on GaN buffer layers.
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