Fabrication and characterization of a nano-device withV(2)O(5) nanowires
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Min, Mi Ra | - |
dc.contributor.author | Kim, Jae-Hoon | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Kim, Yong-Kwan | - |
dc.contributor.author | Ha, Jeong Sook | - |
dc.contributor.author | Kim, Gyu Tae | - |
dc.date.accessioned | 2022-12-21T08:02:50Z | - |
dc.date.available | 2022-12-21T08:02:50Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-06 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180041 | - |
dc.description.abstract | We fabricated nano-devices with V2O5 nanowires synthesized by using the gel/sol method, and we measured their electrical properties. For a metal-insulator-semiconductor (MIS) structure with V2O5 nanowires on p-type Si substrates, HfO2 dielectrics and An gate were deposited on the V2O5 nanowires. The electrical properties of this MIS diode were characterized by using capacitance-voltage (C-V) measurements, and the typical C-V hystersis with a flat-band voltage gap of about 3.5 V appeared at room temperature. Also, for an electron tunneling device via nanowires, An nano-electrodes with a 30 nm gap were fabricated on a SiO2/Si substrate by using electron-beam lithography. This device with V2O5 nanowires inserted into nano-gap electrodes showed an apparent electron tunneling behavior. These electrical properties imply that the use of V2O5 nanowires for memory and tunneling devices may be feasible. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Fabrication and characterization of a nano-device withV(2)O(5) nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jae-Hoon | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.3938/jkps.50.1819 | - |
dc.identifier.scopusid | 2-s2.0-34547380963 | - |
dc.identifier.wosid | 000247326800041 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1819 - 1822 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 50 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1819 | - |
dc.citation.endPage | 1822 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001194424 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | NANOTUBES | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordAuthor | nanowires | - |
dc.subject.keywordAuthor | V2O5 | - |
dc.subject.keywordAuthor | metal-insulator-semiconductor | - |
dc.subject.keywordAuthor | tunneling device | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?uid=8608&vmd=Full | - |
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