Fabrication and characterization of a nano-device withV(2)O(5) nanowires
- Authors
- Min, Mi Ra; Kim, Jae-Hoon; Kim, Eun Kyu; Kim, Yong-Kwan; Ha, Jeong Sook; Kim, Gyu Tae
- Issue Date
- Jun-2007
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- nanowires; V2O5; metal-insulator-semiconductor; tunneling device
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1819 - 1822
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 50
- Number
- 6
- Start Page
- 1819
- End Page
- 1822
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180041
- DOI
- 10.3938/jkps.50.1819
- ISSN
- 0374-4884
- Abstract
- We fabricated nano-devices with V2O5 nanowires synthesized by using the gel/sol method, and we measured their electrical properties. For a metal-insulator-semiconductor (MIS) structure with V2O5 nanowires on p-type Si substrates, HfO2 dielectrics and An gate were deposited on the V2O5 nanowires. The electrical properties of this MIS diode were characterized by using capacitance-voltage (C-V) measurements, and the typical C-V hystersis with a flat-band voltage gap of about 3.5 V appeared at room temperature. Also, for an electron tunneling device via nanowires, An nano-electrodes with a 30 nm gap were fabricated on a SiO2/Si substrate by using electron-beam lithography. This device with V2O5 nanowires inserted into nano-gap electrodes showed an apparent electron tunneling behavior. These electrical properties imply that the use of V2O5 nanowires for memory and tunneling devices may be feasible.
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