Enhanced stability of 1D molecular lines on the h-terminated Si(001) surface
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Jin Ho | - |
dc.contributor.author | Cho, Jun Hyung | - |
dc.date.accessioned | 2022-12-21T08:06:05Z | - |
dc.date.available | 2022-12-21T08:06:05Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-06 | - |
dc.identifier.issn | 0031-9007 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180070 | - |
dc.description.abstract | We present a facile method for the self-directed growth of 1D molecular lines on the H-terminated Si(001) surface. Instead of a previously employed single dangling bond, we here employ a single H-free Si dimer as a reaction site, resulting in an enhanced stability of the radical intermediate for the O-phthalaldehyde (OP) molecule containing two carbonyl groups. This radical intermediate easily abstracts two H atoms from a neighboring Si dimer, thereby allowing the chain reaction for a 1D molecular line. Such a fabricated OP line will be stable at higher temperatures compared to previously reported alkene lines because of its enhanced stability. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Enhanced stability of 1D molecular lines on the h-terminated Si(001) surface | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Jun Hyung | - |
dc.identifier.doi | 10.1103/PhysRevLett.98.246101 | - |
dc.identifier.scopusid | 2-s2.0-34547397460 | - |
dc.identifier.wosid | 000247306300032 | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW LETTERS, v.98, no.24, pp.1 - 4 | - |
dc.relation.isPartOf | PHYSICAL REVIEW LETTERS | - |
dc.citation.title | PHYSICAL REVIEW LETTERS | - |
dc.citation.volume | 98 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | SELF-DIRECTED GROWTH | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | PSEUDOPOTENTIALS | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.identifier.url | https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.98.246101 | - |
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