Enhanced stability of 1D molecular lines on the h-terminated Si(001) surface
- Authors
- Choi, Jin Ho; Cho, Jun Hyung
- Issue Date
- Jun-2007
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW LETTERS, v.98, no.24, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL REVIEW LETTERS
- Volume
- 98
- Number
- 24
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180070
- DOI
- 10.1103/PhysRevLett.98.246101
- ISSN
- 0031-9007
- Abstract
- We present a facile method for the self-directed growth of 1D molecular lines on the H-terminated Si(001) surface. Instead of a previously employed single dangling bond, we here employ a single H-free Si dimer as a reaction site, resulting in an enhanced stability of the radical intermediate for the O-phthalaldehyde (OP) molecule containing two carbonyl groups. This radical intermediate easily abstracts two H atoms from a neighboring Si dimer, thereby allowing the chain reaction for a 1D molecular line. Such a fabricated OP line will be stable at higher temperatures compared to previously reported alkene lines because of its enhanced stability.
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