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SCBF 장치에서 이온전류에 대한 포텐셜 우물 구조의 영향Effect of Potential Well Structure on Ion Current in SCBF Device
- Other Titles
- Effect of Potential Well Structure on Ion Current in SCBF Device
- Issue Date
- May-2007
- Publisher
- 한국전기전자재료학회
- Keywords
- SCBF device; Neutron production rate; Ion current; Potential well structure; FEM-FCT method; Grid cathode; SCBF device; Neutron production rate; Ion current; Potential well structure; FEM-FCT method; Grid cathode
- Citation
- 전기전자재료학회논문지, v.20, no.5, pp.471 - 477
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 20
- Number
- 5
- Start Page
- 471
- End Page
- 477
- ISSN
- 1226-7945
- Abstract
- SCBF(Spherically Convergent Beam Fusion) device has been studied as a neutron source. Neutron production rate is a most important factor for the application of SCBF device and is proportional to the square of the ion current[1]. It is regarded generally that some correlations between the potential well structure and the ion current exist. In this paper, the ion current and potential distribution were calculated in a variety of grid cathode geometries using FEM-FCT method. Single potential well structure was certified inside the grid cathode. The deeper the potential well became, the higher the ion current due to the high electric field near the grid cathode became.
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Collections - 서울 공과대학 > 서울 전기공학전공 > 1. Journal Articles
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Related Researcher
- Ko, Kwang Cheol
- COLLEGE OF ENGINEERING (MAJOR IN ELECTRICAL ENGINEERING)