Enhanced external efficiency of InGaN/GaN quantum well light-emitting diodes by mediating surface plasmon-polaritons
- Authors
- Yoon, Jaewoong; Choi, Kiyoung; Shin, Dongho; Song, Seok Ho; Won, Hyung Sik; Kim, Jin Ha; Lee, Jong Myeon
- Issue Date
- Apr-2007
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- surface plasmon-polaritons; light-emitting diodes; Purcell enhancements; InGaN/GaN quantum well
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.4, pp.1009 - 1017
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 50
- Number
- 4
- Start Page
- 1009
- End Page
- 1017
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180266
- DOI
- 10.3938/jkps.50.1009
- ISSN
- 0374-4884
- Abstract
- An effect of mediation of surface plasmon-polaritons in the spontaneous radiation process of InGaN/GaN quantum-well light-emitting diodes is studied as a method for increasing the external efficiency. A finite-difference time-domain (FDTD) simulation is used to calculate the efficiency of extraction from surface plasmon-polaritons to out-side radiation. We found that a reflection type diffraction grating was more desirable than a transmission type. After optimization of the grating geometries and consideration of the Purcell enhancement factor, a 1.4-fold increase in the external efficiency is estimated when the thickness of the positively-doped GaN between the silver anode and the quantum well is 20 nm.
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