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Highly efficient organic light-emitting diodes fabricated utilizing nickel-oxide buffer layers between the anodes and the hole transport layers
- Authors
- Im, Hee Chun; Choo, Dong Chul; Kim, Tae Whan; Kim, JH; Seo, Jong Huyn; Kim, YK
- Issue Date
- Apr-2007
- Publisher
- Elsevier Sequoia
- Keywords
- organic light-emitting diodes; electrical properties; optical properties; nickel oxide
- Citation
- Thin Solid Films, v.515, no.12, pp 5099 - 5102
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 515
- Number
- 12
- Start Page
- 5099
- End Page
- 5102
- ISSN
- 0040-6090
1879-2731
- Abstract
- The electrical and the optical properties of organic light-emitting diodes (OLEDs) fabricated utilizing nickel-oxide (NiO) buffer layers between the anodes and the hole transport layers were investigated. The NiO layer was formed by using a thermally evaporated nickel thin film and a subsequent oxidation process. The tunneling holes in the OLED were increased due to the existence of the NiO layer between the anode and the hole transport layer, resulting in enhanced efficiency for the OLED. These results indicate that OLEDs with NiO buffer layers hold promise for potential applications in highly-efficient flat-panel displays.
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