Electrical characteristics of poly(3-hexylthiophene) organic thin film transistor with electroplated metal gate electrodes on polyimide
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seol, Young Gog | - |
dc.contributor.author | Lee, JG | - |
dc.contributor.author | Lee, Nae Eun | - |
dc.contributor.author | Lee, Sang Seol | - |
dc.contributor.author | Ahn, Jinho | - |
dc.date.accessioned | 2022-12-21T08:51:18Z | - |
dc.date.available | 2022-12-21T08:51:18Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-04 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180295 | - |
dc.description.abstract | The electroplating of the gate electrode on a flexible polyimide (PI) substrate was successfully applied to the fabrication of inverted-staggered poly(3-hexylthiophene) (P3HT) organic thin film transistors (OTFTs). The Ni gate electrode was electroplated through patterned negative photo-resist (KMPR) masks onto Cu (seed)/Cr (adhesion) layers that had been sputter-deposited on O-2-plasma-treated PI substrates. The electrical measurements of the fabricated OTFTs with the SiO2 gate insulator indicated non-ideal output characteristics, which are similar to the model of electrical transport by a space-charge limited current (SCLC). The use of a poly(4-vinyl phenol) (PVP) and SiO2/PVP bilayer gate dielectric produced output characteristics that were closer to the ideal TFT behavior but led to a lower effective mobility and on/off current (I-on/I-off). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Electrical characteristics of poly(3-hexylthiophene) organic thin film transistor with electroplated metal gate electrodes on polyimide | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.1016/j.tsf.2006.10.018 | - |
dc.identifier.scopusid | 2-s2.0-33947100854 | - |
dc.identifier.wosid | 000245739600048 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.515, no.12, pp.5065 - 5069 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 515 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 5065 | - |
dc.citation.endPage | 5069 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SU-8 PHOTORESIST MASK | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | REGIOREGULAR POLY(3-HEXYLTHIOPHENE) | - |
dc.subject.keywordPlus | MICROSCALE METALLIZATION | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordPlus | DRIVEN | - |
dc.subject.keywordPlus | MATRIX | - |
dc.subject.keywordAuthor | organic thin film transistor | - |
dc.subject.keywordAuthor | P3HT | - |
dc.subject.keywordAuthor | Ni electroplating | - |
dc.subject.keywordAuthor | flexible devices | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609006011606?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.