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High-K and low loss Bi1.5Zn1.0Nb1.5O 7/polyimide composite films for application in embedded capacitors
- Issue Date
- Mar-2007
- Publisher
- Wiley-Blackwell
- Keywords
- BZN; Capacitors; Dielectric properties; Embedded; Polyimides
- Citation
- Macromolecular Symposia, v.249-250, pp.241 - 246
- Indexed
- SCOPUS
- Journal Title
- Macromolecular Symposia
- Volume
- 249-250
- Start Page
- 241
- End Page
- 246
- ISSN
- 1022-1360
- Abstract
- We report on the role of Bi1.5Zn1.0Nb 1.5O7 (BZN) ceramic fillers in notably reducing the dielectric loss of BZN/polyimide composite films manufactured for application in flexible RF embedded capacitors. The composite films were synthesized using a colloidal process. INAAT (isopropyl tris(N-amino-ethyl aminoethyl)titanate) was used as a coupling agent for homogeneous dispersion of BZN particles into a polyimide matrix. The BZN/polyimide composite films (BZN content at 50 Vol%) exhibited a low dielectric loss of 0.0369 at 12 MHz while retaining a high dielectric constant of 14.75.
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Related Researcher
- Oh, Seong-Geun
- COLLEGE OF ENGINEERING (DEPARTMENT OF CHEMICAL ENGINEERING)