Characteristics of n-type SB-MOSFETs manufactured by using a metal-gate & a high-K dielectric
DC Field | Value | Language |
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dc.contributor.author | Park, Byoungchul | - |
dc.contributor.author | Lee, Hi Deok | - |
dc.contributor.author | Kim, Yarkyeon | - |
dc.contributor.author | Jang, Moongyu | - |
dc.contributor.author | Choi, Cheljong | - |
dc.contributor.author | Jun, Myungsim | - |
dc.contributor.author | Kim, Taeyoub | - |
dc.contributor.author | Lee, Seongjae | - |
dc.date.accessioned | 2022-12-21T09:00:18Z | - |
dc.date.available | 2022-12-21T09:00:18Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-03 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180386 | - |
dc.description.abstract | We demonstrated n-type Schottky-barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) by using a low-temperature oxide dummy gate process to effectively form a high-k metal-gate structure. First, a MOS capacitor made a 5-nm-thick high-K dielectric with a tungsten electrode was fabricated. The equivalent oxide thickness and the flat-band voltage extracted by using a quantum-mechanical capacitance-voltage analysis were 1.69 nm and -0.15 V, respectively. A 2 mu m-gate-length n-type SB-MOSFETs with a source and a drain of erbium silicide showed a high on/off-current ratio of about 10(5) at a drain voltage of 1 V. The subthreshold swing and the saturation current were 81 mV/dec and 100 mu A/mu m, respectively. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Characteristics of n-type SB-MOSFETs manufactured by using a metal-gate & a high-K dielectric | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Seongjae | - |
dc.identifier.doi | 10.3938/jkps.50.893 | - |
dc.identifier.scopusid | 2-s2.0-34147109192 | - |
dc.identifier.wosid | 000244988500074 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.3, pp.893 - 896 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 50 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 893 | - |
dc.citation.endPage | 896 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001057146 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordAuthor | SB-MOSFETs | - |
dc.subject.keywordAuthor | high-K | - |
dc.subject.keywordAuthor | metal gate | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?uid=8493&vmd=Full | - |
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