Characteristics of n-type SB-MOSFETs manufactured by using a metal-gate & a high-K dielectric
- Authors
- Park, Byoungchul; Lee, Hi Deok; Kim, Yarkyeon; Jang, Moongyu; Choi, Cheljong; Jun, Myungsim; Kim, Taeyoub; Lee, Seongjae
- Issue Date
- Mar-2007
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- SB-MOSFETs; high-K; metal gate
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.3, pp.893 - 896
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 50
- Number
- 3
- Start Page
- 893
- End Page
- 896
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180386
- DOI
- 10.3938/jkps.50.893
- ISSN
- 0374-4884
- Abstract
- We demonstrated n-type Schottky-barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) by using a low-temperature oxide dummy gate process to effectively form a high-k metal-gate structure. First, a MOS capacitor made a 5-nm-thick high-K dielectric with a tungsten electrode was fabricated. The equivalent oxide thickness and the flat-band voltage extracted by using a quantum-mechanical capacitance-voltage analysis were 1.69 nm and -0.15 V, respectively. A 2 mu m-gate-length n-type SB-MOSFETs with a source and a drain of erbium silicide showed a high on/off-current ratio of about 10(5) at a drain voltage of 1 V. The subthreshold swing and the saturation current were 81 mV/dec and 100 mu A/mu m, respectively.
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