Comparison of co films deposited by remote plasma atomic layer deposition method with cyclopentadienylcobalt dicarbonyl [CpCo(CO)(2)] and dicobalt octacarbonyl [Co-2(CO)(8)]
DC Field | Value | Language |
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dc.contributor.author | Kim, Keunjun | - |
dc.contributor.author | Lee, Keunwoo | - |
dc.contributor.author | Han, Sejin | - |
dc.contributor.author | Park, Taeyong | - |
dc.contributor.author | Lee, Youngjin | - |
dc.contributor.author | Kim, Jeongtae | - |
dc.contributor.author | Yeom, Seungjin | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-12-21T09:02:25Z | - |
dc.date.available | 2022-12-21T09:02:25Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180402 | - |
dc.description.abstract | Co films were deposited by a remote plasma atomic layer deposition (ALD) method using either cyclopentadienylcobalt dicarbonyl [CpCo(CO)(2)] or dicobalt octacarbonyl [Co-2(CO)(8)] as the Co precursor. The Co films deposited with the Co-2(CO)(8) precursor showed a lower ALD process window (75-110 degrees C) and higher growth rate (similar to-1.2 angstrom/cycle) than the Co films deposited with CpCo(CO)(2) which had a process window of 125-175 degrees C and a growth rate of similar to 1.1 angstrom/cycle. The Co films deposited using CpCo(CO)(2) showed an oxygen content of less than 1% with both the H-2 and N-2 plasma and about 13% carbon with the N-2 plasma and about 7-8% carbon with the H-2 plasma. In the case of Co-2(CO)(8), the carbon and oxygen contents were similar to 15 and similar to 2% with the H-2 plasma, and similar to 8 and similar to 21% with the N-2 plasma, respectively. The carbon impurities in the Co films deposited with CpCo(CO)(2) had a significant number of C-H bonds while Co-C bonds were dominant in the Co films deposited with Co-2(CO)(8). The retardation of silicide formation temperature up to 100 degrees C for the Co films deposited with Co-2(CO)(8) can be explained by high carbon content including Co-C bonds. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.title | Comparison of co films deposited by remote plasma atomic layer deposition method with cyclopentadienylcobalt dicarbonyl [CpCo(CO)(2)] and dicobalt octacarbonyl [Co-2(CO)(8)] | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1143/JJAP.46.L173 | - |
dc.identifier.scopusid | 2-s2.0-34547874618 | - |
dc.identifier.wosid | 000245724200008 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.46, no.8-11, pp.L173 - L176 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | - |
dc.citation.volume | 46 | - |
dc.citation.number | 8-11 | - |
dc.citation.startPage | L173 | - |
dc.citation.endPage | L176 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | EPITAXIAL COSI2 LAYER | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | COBALT SILICIDE | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | OMCVD | - |
dc.subject.keywordAuthor | remote plasma ALD | - |
dc.subject.keywordAuthor | cobalt | - |
dc.subject.keywordAuthor | CpCo(CO)(2) | - |
dc.subject.keywordAuthor | Co-2(CO)(8) | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.46.L173 | - |
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