Field effect transistor with ZnS active layer on ITO/glass substrate
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Back, In Jae | - |
dc.contributor.author | Gong, Su-Cheol | - |
dc.contributor.author | Lim, Hun-Seoung | - |
dc.contributor.author | Shin, Ik-Sub | - |
dc.contributor.author | Kuk, Seoun-Woo | - |
dc.contributor.author | Kim, In-Hoe | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.contributor.author | Park, Hyung-Ho | - |
dc.contributor.author | Chang, Ho Jung | - |
dc.date.accessioned | 2022-12-21T09:29:12Z | - |
dc.date.available | 2022-12-21T09:29:12Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2007-01 | - |
dc.identifier.issn | 0255-5476 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180540 | - |
dc.description.abstract | The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1 × 10-8A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Trans Tech Publications Ltd | - |
dc.title | Field effect transistor with ZnS active layer on ITO/glass substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.4028/www.scientific.net/MSF.544-545.753 | - |
dc.identifier.scopusid | 2-s2.0-38349132606 | - |
dc.identifier.bibliographicCitation | Materials Science Forum, v.544-545, pp.753 - 756 | - |
dc.relation.isPartOf | Materials Science Forum | - |
dc.citation.title | Materials Science Forum | - |
dc.citation.volume | 544-545 | - |
dc.citation.startPage | 753 | - |
dc.citation.endPage | 756 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Carrier concentration | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.subject.keywordPlus | Glass | - |
dc.subject.keywordPlus | Leakage currents | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Gate insulator | - |
dc.subject.keywordPlus | Glass substrate | - |
dc.subject.keywordPlus | Organic-inorganic field effect transistors (OIFETs) | - |
dc.subject.keywordPlus | Semiconductor films | - |
dc.subject.keywordPlus | Zinc sulfide | - |
dc.subject.keywordAuthor | ALD | - |
dc.subject.keywordAuthor | Mobility | - |
dc.subject.keywordAuthor | Organic-inorganic field effect transistor | - |
dc.subject.keywordAuthor | PVP | - |
dc.subject.keywordAuthor | ZnS active layer | - |
dc.identifier.url | https://www.scientific.net/MSF.544-545.753 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.